Analysis of Solid and Ionic Surface Reaction Form to Surface Quality when Using Chemical-Mechanical Slurry Polishing
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Faculty of Mechanical Engineering, Hanoi University of Industry, Viet Nam
Faculty of Automobile Technology, Hanoi University of Industry, Viet Nam
Submission date: 2022-04-04
Final revision date: 2022-04-25
Acceptance date: 2022-04-27
Online publication date: 2022-05-04
Publication date: 2022-12-22
Corresponding author
Le Anh Duc   

Faculty of Mechanical Engineering, Hanoi University of Industry, Viet Nam
Journal of Machine Engineering 2022;22(4):82-94
The process of removing machining residues using chemical-mechanical slurry (CMS) has an important place in the creation of ultra-precise components in optical devices. Based on this feature, this work investigates the efficiency of the CMS polishing process by comparing the surface reaction modes by the ionic and solid reaction modes when polishing the yttrium aluminum garnet and sapphire crystal. The study procedures were conducted to clarify the polishing performance corresponding to these two reaction types. The obtained experiments results show that the balance between the mechanical effect process using CMS polishing technology with chemical effect can be achieved with the ionic reaction mode. The results also show that the ionic surface reaction modes give more uniform material removal than the solid reaction on YAG and sapphire crystal surfaces. Therefore, the surface quality when polished by CMS technology with ionic surface reaction modes is better than that of solid surface reaction.
LI J.-S., TANG Y., LI Z.-T., DING X.-R., LI Z., 2017, Study on the Optical Performance of Thin-Film Light-Emitting Diodes Using Fractal Micro-Roughness Surface Model, Applied Surface Science, 410, 60–69.
KUMARI V., KUMAR V., MOHAN D., PURNIMA B., MALIK P., MEHRA R.M., 2012, Effect of Surface Roughness on Laser Induced Nonlinear Optical Properties of Annealed ZnO Thin Films, Journal of Materials Science & Technology, 28, 506–511.
LIU P., BAE S., HONG S., BAE C., SEO H., LEE J., et al., 2022, Investigation of Thermal Effects in Copper Chemical Mechanical Polishing, Precision Engineering, 73, 195–202.
WANG W., ZHANG B., SHI Y., ZHOU J., WANG R., ZENG N., 2022, Improved Chemical Mechanical Polishing Performance in 4H-SiC Substrate by Combining Novel Mixed Abrasive Slurry and Photocatalytic Effect, Applied Surface Science, 575, 151676.
WANG L., ZHANG K., SONG Z., FENG S., 2007. Ceria Concentration Effect on Chemical Mechanical Polishing of Optical Glass, Applied Surface Science, 253, 4951–4954.
DAI S., FU J., LEI H., CHEN Y., 2021, Study on the Interaction Between SiO2 and ZrO2 in the Chemical Mechanical Polishing of Zirconia Ceramic with Colloidal Silica, Ceramics International, 47, 21642–21649.
SHI X.-L., CHEN G., XU L., KANG C., LUO G., LUO H., et al., 2020, Achieving Ultralow Surface Roughness and High Material Removal Rate in Fused Silica via a Novel Acid SiO2 Slurry and its Chemical-Mechanical Polishing Mechanism, Applied Surface Science, 500, 144041.
YIN D., NIU X., ZHANG K., WANG J., CUI Y., 2018, Preparation of MgO Doped Colloidal SiO2 Abrasive and Their Chemical Mechanical Polishing Performance on c-, r- and a-Plane Sapphire Substrate, Ceramics International, 44, 14631–14637.
LIU T., LEI H., 2017, Nd3+-Doped Colloidal SiO2 Composite Abrasives: Synthesis and the Effects on Chemical Mechanical Polishing (CMP) Performances of Sapphire Wafers, Applied Surface Science, 413, 16–26.
ZHANG Z., LIU J., HU W., ZHANG L., XIE W., LIAO L., 2021, Chemical Mechanical Polishing for Sapphire Wafers Using a Developed Slurry, Journal of Manufacturing Processes, 62, 762–771.
ROSS D., YAMAGUCHI H., 2018, Nanometer-Scale Characteristics of Polycrystalline YAG Ceramic Polishing, CIRP Annals, 67, 349–352.
MU Q., JIN Z., HAN X., YAN Y., ZHANG Z., ZHOU P., 2021, Effects of Slurry pH on Chemical and Mechanical Actions During Chemical Mechanical Polishing of YAG, Applied Surface Science, 563, 150359.
ZHANG Z., JIN Z., GUO J., HAN X., MU Q., ZHU X., 2019, A Novel Chemical Mechanical Polishing Slurry for Yttrium Aluminum Garnet Crystal, Applied Surface Science, 496, 143601.
YATES J., 2006, Handbook of Chemistry and Physics, Chemical Engineering Research and Design, 84, 416.
WANG J., CHENG Z., HU Y., CAO Y., WANG P., CAO Z., 2021, Depression Behavior and Mechanism of Sodium Silicate on Bastnaesite and Parisite Flotation, Colloids and Surfaces A: Physicochemical and Engineering Aspects, 631, 127691.
ZHANG Y., HU Y.H., WANG Y.H., WEN S.M., 2014, Effects of Sodium Silicate on Flotation Behavior of Calcium-Bearing Minerals and its Mechanism, Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals, 24, 2366–2372.
KATSUKI F., 2011, Single Asperity Tribochemical Wear of Silicon by Atomic Force Microscopy, Journal of Materials Research, 24, 173–178.
BASIM G.B., VAKARELSKI I.U., MOUDGIL B.M., 2003, Role of Interaction Forces in Controlling the Stability and Polishing Performance of CMP Slurries, Journal of Colloid and Interface Science, 263, 506–515.
LUO C., XU Y., ZENG N., MA T., WANG C., LIU Y., 2020, Synergy Between Dodecylbenzenesulfonic Acid and Isomeric Alcohol Polyoxyethylene Ether for Nano-Scale Scratch Reduction in Copper Chemical Mechanical Polishing, Tribology International, 152, 106576.
AHN Y., YOON J.-Y., BAEK C.-W., KIM Y.-K., 2004, Chemical Mechanical Polishing by Colloidal Silica-Based Slurry for Micro-Scratch Reduction, Wear, 257, 785–789.
RESNIK D., VRTACNIK D., ALJANCIC U., AMON S., 2000, Study of Low-Temperature Direct Bonding of (111) and (100) Silicon Wafers Under Various Ambient and Surface Conditions, Sensors and Actuators A: Physical, 80, 68–76.
PIETSCH G., CHABAL Y., HIGASHI G., 1995, Infrared‐Absorption Spectroscopy of Si(100) and Si(111) Surfaces After Chemomechanical Polishing, Journal of Applied Physics, 78, 1650–1658.
TROGOLO J.A., RAJAN K., 1994, Near Surface Modification of Silica Structure Induced by Chemical/Mechanical Polishing, Journal of Materials Science, 29, 4554–4558.
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